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Technical overview

Luxin-Semi power MOSFET products adopt advanced Shield Gate Trench technology, while reducing the specific on-state resistance (Ronsp) and gate charge (Qg), resulting in a smaller figure of merit (FOM) (Rdson*Qg). This advanced technology enhances the device's switching speed and reduces switching losses. When combined with cutting-edge terminal design and packaging technology, the devices exhibit superior performance and enhanced reliability.

Features and advantages:

1. Very low Rdson

2. Very low Qg and Qgd

3. Faster switching speed

4. Lower switching loss

5. UIS tolerance 100% factory test